Projects in Nanotechnology and MEMs at RIT
Nanomagnetics: The Integration of Si-based Resonant Tunnel Diode (RITD) with CMOS Technology
The 2001 edition of International Technology Roadmap for Semiconductors (ITRS) predicted several emerging technologies that can provide near-term or low-risk solutions, and one of these is the RTD-FET (Resonant Tunneling Diodes - Field Effect Transistors). The incorporation of tunnel diodes into any FET technology is expected to significantly enhance circuit performance: higher circuit speed, reduced component count, and lowered power consumption.
This project was funded by the National Science Foundation (NSF) and was done with collaboration with Ohio State University (OSU) and Naval Research Laboratory (NRL). For more information of this project, click here.